TY - GEN
T1 - Breakdown characteristics of thin SiO2 films deposited from TEOS using plasma CVD method
AU - Ishii, K.
AU - Morita, T.
AU - Isshiki, D.
AU - Ohki, Y.
PY - 1993/12/1
Y1 - 1993/12/1
N2 - For higher integration, higher speed, and smaller power consumption, Amorphous SiO2 thin films have become even more downsized to the submicron scale. One of the best approaches in solving the difficulty of SiO2 deposition at a low temperature and in conformity to the underlayer (in the MOS structure), is to store it in tetraethoxysilane (TEOS). Presented in the paper were the deposition of SiO2 in TEOS using the plasma CVD method and some properties including the dielectric strength.
AB - For higher integration, higher speed, and smaller power consumption, Amorphous SiO2 thin films have become even more downsized to the submicron scale. One of the best approaches in solving the difficulty of SiO2 deposition at a low temperature and in conformity to the underlayer (in the MOS structure), is to store it in tetraethoxysilane (TEOS). Presented in the paper were the deposition of SiO2 in TEOS using the plasma CVD method and some properties including the dielectric strength.
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M3 - Conference contribution
AN - SCOPUS:0027804416
SN - 0780309669
T3 - Annual Report - Conference on Electrical Insulation and Dielectric Phenomena
SP - 355
EP - 358
BT - Annual Report - Conference on Electrical Insulation and Dielectric Phenomena
A2 - Anon, null
PB - Publ by IEEE
T2 - Proceedings of the 1993 IEEE Conference on Electrical Insulation and Dielectric Phenomena
Y2 - 17 October 1993 through 20 October 1993
ER -