Brillouin scattering study in the GaN epitaxial layer

Y. Takagi; M. Ahart; T. Azuhata; T. Sota; K. Suzuki; S. Nakamura

doi:10.1016/0921-4526(95)00807-1

Brillouin scattering study in the GaN epitaxial layer

Y. Takagi^*, M. Ahart, T. Azuhata, T. Sota, K. Suzuki, S. Nakamura

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

66 被引用数 (Scopus)

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We have investigated the elastic properties of a GaN epitaxial layer on a sapphire substrate by Brillouin scattering in the backward and 90 ° scattering geometries. A sample of high optical quality grown by the two-flow MOCVD method with a complex structure of In_0.05Ga_0.95N(0.05 μm)/GaN(2 μm)/sapphire was used. The weak spectra were not simple due to the boundaries and the InGaN thin film. The elastic constants of GaN were estimated and compared with those obtained from X-ray diffraction.

本文言語	English
ページ（範囲）	547-549
ページ数	3
ジャーナル	Physica B: Condensed Matter
巻	219-220
号	1-4
DOI	https://doi.org/10.1016/0921-4526(95)00807-1
出版ステータス	Published - 1996 4月 1

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学

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abstract = "We have investigated the elastic properties of a GaN epitaxial layer on a sapphire substrate by Brillouin scattering in the backward and 90 ° scattering geometries. A sample of high optical quality grown by the two-flow MOCVD method with a complex structure of In0.05Ga0.95N(0.05 μm)/GaN(2 μm)/sapphire was used. The weak spectra were not simple due to the boundaries and the InGaN thin film. The elastic constants of GaN were estimated and compared with those obtained from X-ray diffraction.",

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T1 - Brillouin scattering study in the GaN epitaxial layer

AU - Takagi, Y.

AU - Ahart, M.

AU - Azuhata, T.

AU - Sota, T.

AU - Suzuki, K.

AU - Nakamura, S.

PY - 1996/4/1

Y1 - 1996/4/1

N2 - We have investigated the elastic properties of a GaN epitaxial layer on a sapphire substrate by Brillouin scattering in the backward and 90 ° scattering geometries. A sample of high optical quality grown by the two-flow MOCVD method with a complex structure of In0.05Ga0.95N(0.05 μm)/GaN(2 μm)/sapphire was used. The weak spectra were not simple due to the boundaries and the InGaN thin film. The elastic constants of GaN were estimated and compared with those obtained from X-ray diffraction.

AB - We have investigated the elastic properties of a GaN epitaxial layer on a sapphire substrate by Brillouin scattering in the backward and 90 ° scattering geometries. A sample of high optical quality grown by the two-flow MOCVD method with a complex structure of In0.05Ga0.95N(0.05 μm)/GaN(2 μm)/sapphire was used. The weak spectra were not simple due to the boundaries and the InGaN thin film. The elastic constants of GaN were estimated and compared with those obtained from X-ray diffraction.

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VL - 219-220

SP - 547

EP - 549

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

Brillouin scattering study in the GaN epitaxial layer

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