Capacitive absolute pressure sensors with hybrid structure

Masayosi Esashi*, Shuichi Shoji, Toshitada Wada, Tomio Nagata

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

A capacitive pressure sensor with a reference pressure chamber for absolute pressure measurement was fabricated in a hybrid form. This paper describes the summary, fabrication process and characteristics. The fabricated sensor chip has dimensions of 4.5 × 3.4 × 0.9 mm3, a diaphragm area of 1.7 × 1.7 mm2, an electrode area of 1.5 × 1.5 mm2, a diaphragm thickness of 65 μm and a gap of 1.5 μm between the electrodes. The principal characteristics are as follows: (1) since the pressure sensor chip and the capacitance detection IC chip are fabricated separately, the characteristics of both can easily be optimized and the fabrication is rather simple; (2) since the interior of the reference pressure chamber is hermetically sealed, the effect of humidity can be minimized; (3) since a thin p+ silicon cap is sealed using anodic bonding on the hole in the glass of the reference pressure chamber side, the terminal can be removed from the electrode on the glass side with a minimum parasitic capacitance to the silicon; and (4) the temperature characteristics of the pressure sensor can be minimized by changing the power supply voltage of the capacitance detection IC. The output sensitivity of the hybrid pressure sensor was −9.22 kHz/kgf/cm2, the nonlinearity was −5.3 percent F.S., the thermal zero shift was −3.1 percent F.S. (5 to 45d̀C) and the thermal sensitivity shift was 3.8 percent F.S. (5 to 45d̀C).

本文言語English
ページ(範囲)67-75
ページ数9
ジャーナルElectronics and Communications in Japan (Part II: Electronics)
74
4
DOI
出版ステータスPublished - 1991
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)
  • コンピュータ ネットワークおよび通信
  • 電子工学および電気工学

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