TY - JOUR
T1 - Cathodoluminescence imaging of semiconducting diamond formed by plasma CVD
AU - Yokota, Yoshihiro
AU - Kawarada, Hiroshi
AU - Ma, Jing Sheng
AU - Nishimura, Kazuhito
AU - Hiraki, Akio
N1 - Funding Information:
The authors are grateful to Mr. J. Wei and Mr. Y. Mon for their assistance. They also wish to thank Osaka Diamond Industrial Co., Mr. A. Tomiyama of Kyocera Corp., Mr. J. Suzuki of Shimadzu Co., Dr. T. Yonehara of Canon Inc.. and Idemitsu Petrochemical Inc. for technical support. This work was supported in part by a Grant-in-Aid for Developmental Scientific Research (63850008) from the Ministry of Education. Sci-ence and Culture of Japan.
PY - 1990/6/2
Y1 - 1990/6/2
N2 - Boron-doped p-type semiconducting diamond formed by plasma-assisted chemical vapor deposition (CVD) shows the same blue cathodoluminescence (CL), having a peak at 2.8-2.9 eV, as that of natiural semiconducting diamond classified as type IIb. In natural type IIb diamond (semiconducting) and in natural type IIa diamond (insulating), dislocations are luminescent regions. In single crystal polyhedrons of CVD diamond it has been observed that the luminescent regions are located at {100} growth sectors, but few are found at {111} sectors. This feature can be explained by the difference in the introduction of crystal defects between the {100} and {111} sectors. This phenomenon in CVD diamond has been discussed in comparison with natural type IIb diamond.
AB - Boron-doped p-type semiconducting diamond formed by plasma-assisted chemical vapor deposition (CVD) shows the same blue cathodoluminescence (CL), having a peak at 2.8-2.9 eV, as that of natiural semiconducting diamond classified as type IIb. In natural type IIb diamond (semiconducting) and in natural type IIa diamond (insulating), dislocations are luminescent regions. In single crystal polyhedrons of CVD diamond it has been observed that the luminescent regions are located at {100} growth sectors, but few are found at {111} sectors. This feature can be explained by the difference in the introduction of crystal defects between the {100} and {111} sectors. This phenomenon in CVD diamond has been discussed in comparison with natural type IIb diamond.
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U2 - 10.1016/0022-0248(90)90171-G
DO - 10.1016/0022-0248(90)90171-G
M3 - Article
AN - SCOPUS:0025436919
SN - 0022-0248
VL - 103
SP - 65
EP - 70
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -