TY - JOUR
T1 - Cause of the appearance of oxygen vacancies in yttria-stabilized zirconia and its relation to 2.8 eV photoluminescence
AU - Kaneko, Shoji
AU - Morimoto, Takaaki
AU - Ohki, Yoshimichi
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/6/1
Y1 - 2015/6/1
N2 - When we implanted P+ or B+ ions into yttria-stabilized zirconia (YSZ), its crystallinity was degraded. Concurrently, the photoluminescence at around 2.8 eV originating from two types of oxygen vacancies with one or two captured electrons became weak, indicating a decrease in the number of oxygen vacancies. Oxygen vacancies appear in YSZ as a result of the replacement of Zr4+ by Y3+ in ZrO2. Therefore, it seems that the separation of YSZ into ZrO2 and Y2O3 induced by the ion implantation is responsible for the decrease in the number of oxygen vacancies. Moreover, the intensity of the 2.8 eV photoluminescence returns to the value before the ion implantation if the sample is annealed thermally after the implantation at temperatures higher than the crystallization temperature of YSZ. The reaction opposite to the above seems to be induced by the thermal annealing.
AB - When we implanted P+ or B+ ions into yttria-stabilized zirconia (YSZ), its crystallinity was degraded. Concurrently, the photoluminescence at around 2.8 eV originating from two types of oxygen vacancies with one or two captured electrons became weak, indicating a decrease in the number of oxygen vacancies. Oxygen vacancies appear in YSZ as a result of the replacement of Zr4+ by Y3+ in ZrO2. Therefore, it seems that the separation of YSZ into ZrO2 and Y2O3 induced by the ion implantation is responsible for the decrease in the number of oxygen vacancies. Moreover, the intensity of the 2.8 eV photoluminescence returns to the value before the ion implantation if the sample is annealed thermally after the implantation at temperatures higher than the crystallization temperature of YSZ. The reaction opposite to the above seems to be induced by the thermal annealing.
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U2 - 10.7567/JJAP.54.06GC03
DO - 10.7567/JJAP.54.06GC03
M3 - Article
AN - SCOPUS:84930581387
SN - 0021-4922
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 6
M1 - 06GC03
ER -