@inproceedings{2f4cb58bc61c49a08abb7b4067606eea,
title = "Cavity-free micro thermoelectric energy harvester with Si nanowires",
abstract = "We present a new design of silicon-based micro-thermoelectric generator, which utilizes silicon nanowires as the thermoelectric leg. It is driven by a steep temperature gradient exuding around a heat flow perpendicular to the substrate, and the silicon nanowires are not suspended on a cavity etched on the substrate. The power density is scalable by shortening the silicon nanowire to sub-μm length, which was experimentally demonstrated and tens of µW/cm2-class power generation was achieved at an externally applied temperature difference of only 5 K. A numerical discussion shows that the thermoelectric power can be drastically enhanced by suppressing the thermal resistance at the entire substrate. Thus, there is a plenty of room at the micro- or submicrometric scales for realizing thermal energy harvesting devices with high power densities.",
author = "T. Watanabe and M. Tomita and T. Zhan and K. Shima and Y. Himeda and R. Yamato and T. Matsukawa and T. Matsuki",
note = "Funding Information: This work was supported by the CREST projects JPMJCR15Q7 and JPMJCR19Q5, of Japan Science and Technology Corporation (JST), in part by the NIMS Nanofabrication Platform, and in part by AIST-SCR. The authors thank Mr. D. Kawaguchi from Hamamatsu Photonics K.K. for offering stealth dicing, and the members of the CREST project, Prof. Y. Kamakura, Prof. H. Ikeda, Dr. H. Zhang, Dr. S. Hashimoto, Mr. S. Ohba, Mr. S. Asada, and Mr. T. Xu, for their significant contributions to this research. Publisher Copyright: {\textcopyright} 2019 Electrochemical Society Inc.. All rights reserved.; International Symposium on Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9 - 235th ECS Meeting ; Conference date: 26-05-2019 Through 30-05-2019",
year = "2019",
doi = "10.1149/08903.0095ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "95--110",
editor = "F. Roozeboom and Timans, {P. J.} and K. Kakushima and Gusev, {E. P.} and Z. Karim and D. Misra and Obeng, {Y. S.} and {De Gendt}, S. and H. Jagannathan",
booktitle = "Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9",
edition = "3",
}