@inproceedings{e7bca52b650c49fc8a9e9bbefd1b55db,
title = "Change in structure and TFT performances of IZO, IGO and IGZO films by crystallization",
abstract = "How the a-IGZO films crystallize and how the crystallinity affects the electrical properties, hence the TFT performances, have been investigated in detail. a-IGZO thin films were post-annealed in air at 300-1000 °C for 1h. HREM analyses revealed the crystallization behavior in detail. For the comparative purpose the crystallization behaviors of a-IGO and a-IZO films are also investigated.",
keywords = "Crystal, IGO, IGZO, IZO, Oxide-semiconductor",
author = "Ayaka Suko and Junjun Jia and Shinichi Nakamura and Yuzo Shigesato",
year = "2015",
month = jan,
day = "1",
language = "English",
series = "Proceedings of the International Display Workshops",
publisher = "International Display Workshops",
pages = "12--13",
booktitle = "22nd International Display Workshops, IDW 2015",
note = "22nd International Display Workshops, IDW 2015 ; Conference date: 09-12-2015 Through 11-12-2015",
}