Characteristics of altered layers formed by sputtering with a massive molecular ion containing diverse elements with large mass differences

Yukio Fujiwara; Kouji Kondou; Hidehiko Nonaka; Naoaki Saito; Toshiyuki Fujimoto; Akira Kurokawa; Shingo Ichimura; Mitsuhiro Tomita

doi:10.1063/1.2786906

Characteristics of altered layers formed by sputtering with a massive molecular ion containing diverse elements with large mass differences

Yukio Fujiwara^*, Kouji Kondou, Hidehiko Nonaka, Naoaki Saito, Toshiyuki Fujimoto, Akira Kurokawa, Shingo Ichimura, Mitsuhiro Tomita

^*この研究の対応する著者

研究成果: Article › 査読

2 被引用数 (Scopus)

抄録

Tetrairidium dodecacarbonyl (Ir4 (CO)12) is an organometallic compound called metal cluster complex which has a molecular weight of 1104.9. To investigate its irradiation effect, silicon substrates sputtered with 10 keV Ir4 (CO) 7+ were analyzed by high resolution Rutherford backscattering spectrometry. Experimental results were examined on the basis of a conventional theory of simultaneous implantation and sputtering. The introduction of oxygen gas during sputtering proved to form a thick oxide layer in the substrate, resulting in iridium segregation at the silicon-oxide interface and carbon accumulation near the surface. It was confirmed that oxygen partial pressure significantly affected the characteristics of an altered layer beneath a sputtered surface.

本文言語	English
論文番号	073509
ジャーナル	Journal of Applied Physics
巻	102
号	7
DOI	https://doi.org/10.1063/1.2786906
出版ステータス	Published - 2007 10月 22
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（全般）

文献へのアクセス

10.1063/1.2786906

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引用スタイル

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abstract = "Tetrairidium dodecacarbonyl (Ir4 (CO)12) is an organometallic compound called metal cluster complex which has a molecular weight of 1104.9. To investigate its irradiation effect, silicon substrates sputtered with 10 keV Ir4 (CO) 7+ were analyzed by high resolution Rutherford backscattering spectrometry. Experimental results were examined on the basis of a conventional theory of simultaneous implantation and sputtering. The introduction of oxygen gas during sputtering proved to form a thick oxide layer in the substrate, resulting in iridium segregation at the silicon-oxide interface and carbon accumulation near the surface. It was confirmed that oxygen partial pressure significantly affected the characteristics of an altered layer beneath a sputtered surface.",

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AU - Fujiwara, Yukio

AU - Kondou, Kouji

AU - Nonaka, Hidehiko

AU - Saito, Naoaki

AU - Fujimoto, Toshiyuki

AU - Kurokawa, Akira

AU - Ichimura, Shingo

AU - Tomita, Mitsuhiro

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