抄録
The effect of channel width on the characteristics of polvsilicon thin-film transistors (TFT) was investigated. n-channel TFT’s with a channel length L of 20 μm and a channel width W ranging from 20 to 0.5 pm were fabricated and characterized. The most prominent effect of reducing the TFT channel was a drastic decrease in threshold voltage when W was reduced to less than 5 pm. This decrease was found to be correlated with the decrease in grain-boundary trap density.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1967-1968 |
| ページ数 | 2 |
| ジャーナル | IEEE Transactions on Electron Devices |
| 巻 | 38 |
| 号 | 8 |
| DOI | |
| 出版ステータス | Published - 1991 8月 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学