Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

Koji Usuda; Daisuke Kosemura; Motohiro Tomita; Atsushi Ogura; Tsutomu Tezuka

doi:10.1109/ISTDM.2012.6222440

Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

Koji Usuda^*, Daisuke Kosemura, Motohiro Tomita, Atsushi Ogura, Tsutomu Tezuka

^*この研究の対応する著者

研究成果: Conference contribution

抄録

We have investigated strain relaxation of strained SiGe layers after mesa isolation with a newly developed Raman method with a high number aperture (NA) lens and an immersion technique. It was confirmed that forbidden optical phonon mode (TO) can be effectively excited with the high-NA (1.4) lens and oil immersion technique, and that the non-destructive, and anisotropic strain measurement was successively realized for the strained-SiGe layers. On the other hand, it was found that the strain was more significantly relax in St-SGOI mesas than in St-SiGe mesas. The result implies that the relaxation mechanism in the strained SiGe/Si layer is different from that in St-SGOI layer.

本文言語	English
ホスト出版物のタイトル	2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
ページ	26-27
ページ数	2
DOI	https://doi.org/10.1109/ISTDM.2012.6222440
出版ステータス	Published - 2012 7月 30
外部発表	はい
イベント	6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States 継続期間: 2012 6月 4 → 2012 6月 6

出版物シリーズ

名前	2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

Other

Other	6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
国/地域	United States
City	Berkeley, CA
Period	12/6/4 → 12/6/6

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1109/ISTDM.2012.6222440

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引用スタイル

Usuda, K., Kosemura, D., Tomita, M., Ogura, A., & Tezuka, T. (2012). Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method. In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (pp. 26-27). 記事 6222440 (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings). https://doi.org/10.1109/ISTDM.2012.6222440

Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method. / Usuda, Koji; Kosemura, Daisuke; Tomita, Motohiro その他.
2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 26-27 6222440 (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings).

研究成果: Conference contribution

Usuda, K, Kosemura, D, Tomita, M, Ogura, A & Tezuka, T 2012, Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method. in 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings., 6222440, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, pp. 26-27, 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, United States, 12/6/4. https://doi.org/10.1109/ISTDM.2012.6222440

Usuda K, Kosemura D, Tomita M, Ogura A, Tezuka T. Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method. In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 26-27. 6222440. (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings). doi: 10.1109/ISTDM.2012.6222440

Usuda, Koji ; Kosemura, Daisuke ; Tomita, Motohiro その他. / Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. pp. 26-27 (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings).

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abstract = "We have investigated strain relaxation of strained SiGe layers after mesa isolation with a newly developed Raman method with a high number aperture (NA) lens and an immersion technique. It was confirmed that forbidden optical phonon mode (TO) can be effectively excited with the high-NA (1.4) lens and oil immersion technique, and that the non-destructive, and anisotropic strain measurement was successively realized for the strained-SiGe layers. On the other hand, it was found that the strain was more significantly relax in St-SGOI mesas than in St-SiGe mesas. The result implies that the relaxation mechanism in the strained SiGe/Si layer is different from that in St-SGOI layer.",

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AU - Ogura, Atsushi

AU - Tezuka, Tsutomu

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