TY - GEN
T1 - Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer
AU - Umezawa, T.
AU - Akahane, K.
AU - Kanno, A.
AU - Kawanishi, T.
PY - 2013/1/1
Y1 - 2013/1/1
N2 - We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.
AB - We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.
UR - http://www.scopus.com/inward/record.url?scp=84903778891&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84903778891&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84903778891
SN - 9781557529725
T3 - 2013 Conference on Lasers and Electro-Optics, CLEO 2013
BT - 2013 Conference on Lasers and Electro-Optics, CLEO 2013
PB - IEEE Computer Society
T2 - 2013 Conference on Lasers and Electro-Optics, CLEO 2013
Y2 - 9 June 2013 through 14 June 2013
ER -