抄録
In order to characterize CdTe/CdZnTe detectors in a planar configuration, we have developed a new method to extract μτ products. In this method, we prepare an analytic spectral model based on the charge transport properties in the device, which is intended to be used in fitting calculation. The low mobility-lifetime (μτ) products of carriers in CdTe/CdZnTe detectors produce a position dependency in the charge induction efficiency. The model takes the induction efficiency and interaction positions of photons into account. Since the model is parameterized by μτ products, it can extract μτ products. Here, we demonstrate how the model works based on the results from 2-mm-thick HPB CdZnTe and THM CdTe detectors.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1258-1263 |
| ページ数 | 6 |
| ジャーナル | IEEE Transactions on Nuclear Science |
| 巻 | 49 II |
| 号 | 3 |
| DOI | |
| 出版ステータス | Published - 2002 6月 |
ASJC Scopus subject areas
- 電子工学および電気工学
- 原子力エネルギーおよび原子力工学