TY - GEN
T1 - Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition
AU - Kato, H.
AU - Nango, T.
AU - Miyagawa, T.
AU - Katagiri, T.
AU - Ohki, Y.
N1 - Publisher Copyright:
© 2001 Japan Soc of Applied Physics.
PY - 2001
Y1 - 2001
N2 - Recently, hafnium, and zirconium silicates have been considered to be attractive for new materials with high permittivity We have tried to deposit these silicate films by plasma-enhanced chemical vapor deposition (PECVD). In this report, we discuss the electrical properties and chemical structure of the deposited films.
AB - Recently, hafnium, and zirconium silicates have been considered to be attractive for new materials with high permittivity We have tried to deposit these silicate films by plasma-enhanced chemical vapor deposition (PECVD). In this report, we discuss the electrical properties and chemical structure of the deposited films.
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U2 - 10.1109/IWGI.2001.967575
DO - 10.1109/IWGI.2001.967575
M3 - Conference contribution
AN - SCOPUS:2442547028
T3 - Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001
SP - 166
EP - 169
BT - Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Workshop on Gate Insulator, IWGI 2001
Y2 - 1 November 2001 through 2 November 2001
ER -