TY - JOUR
T1 - Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures
AU - Gozu, Shin Ichiro
AU - Kita, Tomohiro
AU - Sato, Yuuki
AU - Yamada, Syoji
AU - Tomizawa, Masaaki
PY - 2001/7
Y1 - 2001/7
N2 - We have studied electronic and structural characterizations of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures. An improved low-temperature electron mobility of μe = 5.45 × 105 cm2 V s in [1̄ 1 0] was confirmed for a directed Hall-bar sample when Si-doped InAlAs layer was slightly etched. In addition, in-plane mobility anisotropy of 40% between [1 1 0] and [1̄ 1 0] directions was confirmed. This anisotropy seems to be originated from the different undulation period between [1̄ 1 0] and [1 1 0] directions. We theoretically calculated electron mobility taking both alloy disorder scattering and background impurity scattering into account. It is found that the calculated and experimental values are in good agreement.
AB - We have studied electronic and structural characterizations of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures. An improved low-temperature electron mobility of μe = 5.45 × 105 cm2 V s in [1̄ 1 0] was confirmed for a directed Hall-bar sample when Si-doped InAlAs layer was slightly etched. In addition, in-plane mobility anisotropy of 40% between [1 1 0] and [1̄ 1 0] directions was confirmed. This anisotropy seems to be originated from the different undulation period between [1̄ 1 0] and [1 1 0] directions. We theoretically calculated electron mobility taking both alloy disorder scattering and background impurity scattering into account. It is found that the calculated and experimental values are in good agreement.
KW - A1. Low dimensional structures
KW - A3. Molecular beam epitaxy
KW - B1. Arsenates
KW - B2. Semiconducting III-V materials
KW - B3. High electron mobility transistors
UR - http://www.scopus.com/inward/record.url?scp=0035398241&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035398241&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(01)00655-8
DO - 10.1016/S0022-0248(01)00655-8
M3 - Conference article
AN - SCOPUS:0035398241
SN - 0022-0248
VL - 227-228
SP - 155
EP - 160
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - 11th International Conference on Molecular Beam Epitaxy
Y2 - 11 September 2000 through 15 September 2000
ER -