@article{0a2f764105ab4ab495846b7d5fc7b2cc,
title = "Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures",
abstract = "AlN thin films have been grown on c -cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5× 10-4 Pa was used to examine the crystallographic orientation dependence of Al K -edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N2 backfill of 7× 10-2 Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure.",
author = "T. Suga and S. Kameyama and S. Yoshioka and T. Yamamoto and I. Tanaka and T. Mizoguchi",
note = "Funding Information: The authors would like to thank Dr. R. C. C. Perera and Dr. P. Nachimuthu of Lawrence Berkeley Laboratory for their assistance with XANES measurements at ALS, and Professor Wai Yim Ching for allowing the authors to use the OLCAO code. This work was supported by three projects from the Ministry of Education, Culture, Sports, Science and Technology of Japan. They are Grant-in-Aid for Scientific Research on Priority Areas (No. 751), the Computational Materials Science Project in Kyoto University, and the 21st century COE program. One of the authors, T.M., is a JSPS research fellow.",
year = "2005",
month = apr,
day = "18",
doi = "10.1063/1.1904714",
language = "English",
volume = "86",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",
}