Characteristics of network SWNT FETs (SWNT-TFTs) were examined. The SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm 2/Vs, ≈ 100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, although the on/off ratio was 102. To improve the low on/off ratio, so-called electrical breakdown was introduced. By this procedure, 1.1 cm2/Vs of mobility and 106 of the on/off ratio were simultaneously achieved.
|ホスト出版物のタイトル||AIP Conference Proceedings|
|出版ステータス||Published - 2005 9月 27|
|イベント||ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials - Kirchberg, Tirol|
継続期間: 2005 3月 12 → 2005 3月 19
|Other||ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials|
|Period||05/3/12 → 05/3/19|
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