抄録
Yttrium barium copper oxide system, which undergoes a metal-to-insulator transition under variation of carrier concentration, was investigated using Raman spectroscopy. The intensity of CuO2-plane phonon modes decreased as the system approached the metal-to-insulator phase boundary and it scaled with the inverse of the hole concentration within the CuO2 conducting planes. The CuO2-plane mode intensity and transition temperature for the oxides was found to be correlated. It was found that a simple and useful probe for metal-to-insulator transition and carrier dynamics in the CuO2 plane for substituted materials was provided by this correlation and the CuO2-plane mode intensity.
本文言語 | English |
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ページ(範囲) | 4988-4990 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 81 |
号 | 26 |
DOI | |
出版ステータス | Published - 2002 12月 23 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)