TY - JOUR
T1 - Charge state stabilization of shallow nitrogen vacancy centers in diamond by oxygen surface modification
AU - Yamano, Hayate
AU - Kawai, Sora
AU - Kato, Kanami
AU - Kageura, Taisuke
AU - Inaba, Masafumi
AU - Okada, Takuma
AU - Higashimata, Itaru
AU - Haruyama, Moriyoshi
AU - Tanii, Takashi
AU - Yamada, Keisuke
AU - Onoda, Shinobu
AU - Kada, Wataru
AU - Hanaizumi, Osamu
AU - Teraji, Tokuyuki
AU - Isoya, Junichi
AU - Kawarada, Hiroshi
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/4
Y1 - 2017/4
N2 - We investigated the charge state stability and coherence properties of near-surface single nitrogen vacancy (NV) centers in 12C-enriched diamond for potential use in nanoscale magnetic field sensing applications. The stability of charge states in negatively charged NV centers (NV-) was evaluated using one of the pulsed optically detected magnetic resonance measurements, Rabi oscillation measurements. During the accumulation of Rabi oscillations, an unstable shallow NV- was converted to a neutral state. As a result, the contrast of Rabi oscillations degraded, depending on charge state stability. We stabilized the NV- state of very shallow NV centers (∼2.6 ± 1.1nm from the surface) created by 1.2 keV nitrogen ion implantation by diamond surface modification, UV/ozone exposure, and oxygen annealing. This improvement indicates that we can suppress the upward surface band bending and surface potential fluctuations through Fermi level pinning originating from oxygen-terminated diamond surfaces.
AB - We investigated the charge state stability and coherence properties of near-surface single nitrogen vacancy (NV) centers in 12C-enriched diamond for potential use in nanoscale magnetic field sensing applications. The stability of charge states in negatively charged NV centers (NV-) was evaluated using one of the pulsed optically detected magnetic resonance measurements, Rabi oscillation measurements. During the accumulation of Rabi oscillations, an unstable shallow NV- was converted to a neutral state. As a result, the contrast of Rabi oscillations degraded, depending on charge state stability. We stabilized the NV- state of very shallow NV centers (∼2.6 ± 1.1nm from the surface) created by 1.2 keV nitrogen ion implantation by diamond surface modification, UV/ozone exposure, and oxygen annealing. This improvement indicates that we can suppress the upward surface band bending and surface potential fluctuations through Fermi level pinning originating from oxygen-terminated diamond surfaces.
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U2 - 10.7567/JJAP.56.04CK08
DO - 10.7567/JJAP.56.04CK08
M3 - Article
AN - SCOPUS:85017101586
SN - 0021-4922
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 4
M1 - 04CK08
ER -