Chemical short-range order of ion-beam-induced amorphous SiC (a-SiC) has been examined by transmission electron microscopy in combination with imaging plate techniques. Single crystals of 6H-SiC were irradiated with 300 keV xenon ions to a fluence of 1015 cm-2 at cryogenic and elevated temperatures. Atomic pair-distribution functions showed that not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds exist within the first coordination shell of a-SiC networks. It was found that chemical short-range order of a-SiC depends on the ion irradiation conditions: the amorphous networks became more chemically disorder with decreasing the irradiation temperature.
|ジャーナル||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|出版ステータス||Published - 2006 1月|
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