Chemical Vapor Deposition of Monolayer Mo1-xWxS2 Crystals with Tunable Band Gaps

Ziqian Wang, Pan Liu, Yoshikazu Ito, Shoucong Ning, Yongwen Tan, Takeshi Fujita, Akihiko Hirata, Mingwei Chen*


研究成果: Article査読

96 被引用数 (Scopus)


Band gap engineering of monolayer transition metal dichalcogenides, such as MoS2 and WS2, is essential for the applications of the two-dimensional (2D) crystals in electronic and optoelectronic devices. Although it is known that chemical mixture can evidently change the band gaps of alloyed Mo1-xWxS2 crystals, the successful growth of Mo1-xWxS2 monolayers with tunable Mo/W ratios has not been realized by conventional chemical vapor deposition. Herein, we developed a low-pressure chemical vapor deposition (LP-CVD) method to grow monolayer Mo1-xWxS2 (x = 0-1) 2D crystals with a wide range of Mo/W ratios. Raman spectroscopy and high-resolution transmission electron microscopy demonstrate the homogeneous mixture of Mo and W in the 2D alloys. Photoluminescence measurements show that the optical band gaps of the monolayer Mo1-xWxS2 crystals strongly depend on the Mo/W ratios and continuously tunable band gap can be achieved by controlling the W or Mo portion by the LP-CVD.

ジャーナルScientific reports
出版ステータスPublished - 2016 2月 22

ASJC Scopus subject areas

  • 一般


「Chemical Vapor Deposition of Monolayer Mo1-xWxS2 Crystals with Tunable Band Gaps」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。