抄録
Dynamic MOS RAMs (MOS (D) RAMs) have been developed according to scaling relationships. But it is necessary to correct the scaling relationships because of soft error. In this paper, a modified scaling law is described based on the assumption that the soft error becomes the governing condition of the scaling law. In addition, a new device structure and circuit configuration are proposed to realize high-speed, low soft error rate and low power consumption.
本文言語 | English |
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ページ(範囲) | 92-101 |
ページ数 | 10 |
ジャーナル | Electronics & communications in Japan |
巻 | 65 |
号 | 7 |
出版ステータス | Published - 1983 7月 |
外部発表 | はい |
ASJC Scopus subject areas
- 工学(全般)