TY - JOUR
T1 - Classification of the pore structure of n-type silicon and its microstructure
AU - Osaka, Tetsuya
AU - Ogasawara, Kako
AU - Nakahara, Shohei
PY - 1997/9
Y1 - 1997/9
N2 - Porous silicon samples were grown under various anodization conditions on {100} oriented n-silicon substrates. Scanning and transmission electron microscope observations have shown that the microstructure of porous silicon primarily falls into three categories, which can be classified as single layer, double layer, and large macropore types. These three types differ not only in their microstructural details, but also in luminescence properties. In all three types of samples, the inner surface of pores created by anodization is coated with a low density amorphous material, which contained silicon and oxygen. In addition, all the pore surfaces were roughened by anodization, leaving nanoscale crystalline silicon asperities.
AB - Porous silicon samples were grown under various anodization conditions on {100} oriented n-silicon substrates. Scanning and transmission electron microscope observations have shown that the microstructure of porous silicon primarily falls into three categories, which can be classified as single layer, double layer, and large macropore types. These three types differ not only in their microstructural details, but also in luminescence properties. In all three types of samples, the inner surface of pores created by anodization is coated with a low density amorphous material, which contained silicon and oxygen. In addition, all the pore surfaces were roughened by anodization, leaving nanoscale crystalline silicon asperities.
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U2 - 10.1149/1.1837988
DO - 10.1149/1.1837988
M3 - Article
AN - SCOPUS:0031232656
SN - 0013-4651
VL - 144
SP - 3226
EP - 3237
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 9
ER -