TY - JOUR
T1 - Coating of Fine Particles with Ultrafine Silicon Powder by Gas-Phase Monosilane Pyrolysis
AU - Kojima, Toshinori
AU - Wakatsuki, Ryohta
AU - Matsukata, Masahiko
N1 - Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.
PY - 1992
Y1 - 1992
N2 - Silicon nitride particles with a diameter of 5~20μm were coated with ultrafine, submicron silicon powder. The product is expected to show extreme properties in a reactive sintering process. A uniform and dilute suspension of core particles of silicon nitride in monosilane diluted with argon were introduced into a CVD reactor from a bed of core particles. Additional argon gas was also introduced into the reactor, from the annulus at the bottom of the reactor. The flow resistance of the procuct layer was found to be proportional to the amount of silicon fines. From the results of SEM and TEM, it was found that the core particles were uniformly coated with ultrafine silicon powder with primary particle diameter of around 0.01 μm. In the XRD chart, a weak pattern of silicon fines was found to overlap the pattern of silicon nitride. Without the use of additional gas, on the other hand, core particles coated with a thick deposit were manufactured and a broad XRD chart without the silicon pattern was observed. Heterogeneous deposition of silicon on core particles was found to be avoided by the use of additional gas. The additional gas seemed to be heated in the bottom of the reactor and to mix with reactant gas, thereby causing the homogeneous reaction and suppressing heterogenous CVD by reducing the residence time in the reactor.
AB - Silicon nitride particles with a diameter of 5~20μm were coated with ultrafine, submicron silicon powder. The product is expected to show extreme properties in a reactive sintering process. A uniform and dilute suspension of core particles of silicon nitride in monosilane diluted with argon were introduced into a CVD reactor from a bed of core particles. Additional argon gas was also introduced into the reactor, from the annulus at the bottom of the reactor. The flow resistance of the procuct layer was found to be proportional to the amount of silicon fines. From the results of SEM and TEM, it was found that the core particles were uniformly coated with ultrafine silicon powder with primary particle diameter of around 0.01 μm. In the XRD chart, a weak pattern of silicon fines was found to overlap the pattern of silicon nitride. Without the use of additional gas, on the other hand, core particles coated with a thick deposit were manufactured and a broad XRD chart without the silicon pattern was observed. Heterogeneous deposition of silicon on core particles was found to be avoided by the use of additional gas. The additional gas seemed to be heated in the bottom of the reactor and to mix with reactant gas, thereby causing the homogeneous reaction and suppressing heterogenous CVD by reducing the residence time in the reactor.
KW - Chemical Vapor Deposition
KW - Coating
KW - Homogeneous Monosilane Pyrolysis
KW - Silicon Nitride
KW - Ultrafine Silicon Powder
UR - http://www.scopus.com/inward/record.url?scp=0009717761&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0009717761&partnerID=8YFLogxK
U2 - 10.1252/kakoronbunshu.18.274
DO - 10.1252/kakoronbunshu.18.274
M3 - Article
AN - SCOPUS:0009717761
SN - 0386-216X
VL - 18
SP - 274
EP - 280
JO - kagaku kogaku ronbunshu
JF - kagaku kogaku ronbunshu
IS - 3
ER -