TY - JOUR
T1 - Comparative study of excitonic recombination radiation from diamonds grown by CVD and HP/HT methods
AU - Murakami, T.
AU - Nakamura, K.
AU - Yamashita, S.
AU - Takeuchi, S.
AU - Murakawa, M.
AU - Kawarada, H.
N1 - Funding Information:
The authors would like to thank r S. Shikata of Sumitomo Electric II diamond substrates Waseda University an Institute of Space and Astronautical Science for their valuable discussions. This work was been supported in part by the Grant-in-aid for General Scientific Research (07650384) from the Ministry of Education, Science and Culture of Japan.
PY - 1997/10
Y1 - 1997/10
N2 - Intensive and dominant free-exciton (FE) recombination radiation is observed from chamber flame (CF) diamonds, and high pressure and high temperature (HP/HT) diamonds. The FE recombination radiation associated with one TO phonon (FETO) intensity from CF and HP/HT diamonds increases as temperature decreases from room temperature until 120 and 110 K, respectively, and saturates below these temperatures which are 30-50 K lower than the temperature at which the FETO intensity from microwave plasma chemical vapor deposition (MPCVD) diamond saturates. The crystallinity of CF, HP/HT and MPCVD diamonds is discussed by the saturation temperature depending on the non-radiative transition probability caused by intrinsic dissociation of FE. Increase of the FETO intensity is observed from an oxygen-terminated surface. The FETO intensity from oxygen-terminated surface of CF isolated particle is about three times larger than that from hydrogen-terminated surface. The change of the FETO intensity is explained by the difference in the surface electronic structure and/or the surface band bending between the oxygen-and hydrogen-terminated surfaces.
AB - Intensive and dominant free-exciton (FE) recombination radiation is observed from chamber flame (CF) diamonds, and high pressure and high temperature (HP/HT) diamonds. The FE recombination radiation associated with one TO phonon (FETO) intensity from CF and HP/HT diamonds increases as temperature decreases from room temperature until 120 and 110 K, respectively, and saturates below these temperatures which are 30-50 K lower than the temperature at which the FETO intensity from microwave plasma chemical vapor deposition (MPCVD) diamond saturates. The crystallinity of CF, HP/HT and MPCVD diamonds is discussed by the saturation temperature depending on the non-radiative transition probability caused by intrinsic dissociation of FE. Increase of the FETO intensity is observed from an oxygen-terminated surface. The FETO intensity from oxygen-terminated surface of CF isolated particle is about three times larger than that from hydrogen-terminated surface. The change of the FETO intensity is explained by the difference in the surface electronic structure and/or the surface band bending between the oxygen-and hydrogen-terminated surfaces.
KW - Chamber flame method
KW - Free exciton recombination radiation
KW - High pressure and high temperature method
KW - Negative-electron-affinity
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U2 - 10.1016/s0925-9635(07)00039-8
DO - 10.1016/s0925-9635(07)00039-8
M3 - Article
AN - SCOPUS:0043140084
SN - 0925-9635
VL - 6
SP - 1668
EP - 1673
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 11
ER -