Comparative Study of TiO2 Anatase Epitaxial Thin Films Grown by Magnetron Sputtering and Metalorganic Chemical Vapor Deposition

Masayuki Kamei; Takahira Miyagi; Tomoyuki Ogawa; Takefumi Mitsuhashi; Atsushi Yamazaki; Tetsuya Sato

doi:10.1143/jjap.42.7025

Comparative Study of TiO₂ Anatase Epitaxial Thin Films Grown by Magnetron Sputtering and Metalorganic Chemical Vapor Deposition

Masayuki Kamei^*, Takahira Miyagi, Tomoyuki Ogawa, Takefumi Mitsuhashi, Atsushi Yamazaki, Tetsuya Sato

^*この研究の対応する著者

創造理工学部

研究成果: Article › 査読

4 被引用数 (Scopus)

抄録

Thin films of TiO₂ anatase structure were heteroepitaxially grown on SrTiO₃(001) single crystalline substrates by direct current magnetron sputtering (DCSP) and metalorganic chemical vapor deposition (MOCVD). The DCSP-grown films always showed larger lattice constants than those of the MOCVD-grown films. The RBS measurements revealed a difference in the depth profiles of the misfit dislocations in the films, which was considered to be the origin of the larger lattice constants in the DCSP-grown films. A striking difference was also present in the photoluminescence characteristics in MOCVD-grown films and DCSP-grown films; the photoluminescence peak originating from the self- trapping excitons observed in MOCVD-films disappeared in DCSP-films.

本文言語	English
ページ（範囲）	7025-7028
ページ数	4
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	42
号	11
DOI	https://doi.org/10.1143/jjap.42.7025
出版ステータス	Published - 2003 11月

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/jjap.42.7025

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引用スタイル

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title = "Comparative Study of TiO2 Anatase Epitaxial Thin Films Grown by Magnetron Sputtering and Metalorganic Chemical Vapor Deposition",

abstract = "Thin films of TiO2 anatase structure were heteroepitaxially grown on SrTiO3(001) single crystalline substrates by direct current magnetron sputtering (DCSP) and metalorganic chemical vapor deposition (MOCVD). The DCSP-grown films always showed larger lattice constants than those of the MOCVD-grown films. The RBS measurements revealed a difference in the depth profiles of the misfit dislocations in the films, which was considered to be the origin of the larger lattice constants in the DCSP-grown films. A striking difference was also present in the photoluminescence characteristics in MOCVD-grown films and DCSP-grown films; the photoluminescence peak originating from the self- trapping excitons observed in MOCVD-films disappeared in DCSP-films.",

keywords = "CVD, Epitaxy, Rutherford backscattering spectroscopy, Sputtering, Titanium oxide",

author = "Masayuki Kamei and Takahira Miyagi and Tomoyuki Ogawa and Takefumi Mitsuhashi and Atsushi Yamazaki and Tetsuya Sato",

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T1 - Comparative Study of TiO2 Anatase Epitaxial Thin Films Grown by Magnetron Sputtering and Metalorganic Chemical Vapor Deposition

AU - Kamei, Masayuki

AU - Miyagi, Takahira

AU - Ogawa, Tomoyuki

AU - Mitsuhashi, Takefumi

AU - Yamazaki, Atsushi

AU - Sato, Tetsuya

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N2 - Thin films of TiO2 anatase structure were heteroepitaxially grown on SrTiO3(001) single crystalline substrates by direct current magnetron sputtering (DCSP) and metalorganic chemical vapor deposition (MOCVD). The DCSP-grown films always showed larger lattice constants than those of the MOCVD-grown films. The RBS measurements revealed a difference in the depth profiles of the misfit dislocations in the films, which was considered to be the origin of the larger lattice constants in the DCSP-grown films. A striking difference was also present in the photoluminescence characteristics in MOCVD-grown films and DCSP-grown films; the photoluminescence peak originating from the self- trapping excitons observed in MOCVD-films disappeared in DCSP-films.

AB - Thin films of TiO2 anatase structure were heteroepitaxially grown on SrTiO3(001) single crystalline substrates by direct current magnetron sputtering (DCSP) and metalorganic chemical vapor deposition (MOCVD). The DCSP-grown films always showed larger lattice constants than those of the MOCVD-grown films. The RBS measurements revealed a difference in the depth profiles of the misfit dislocations in the films, which was considered to be the origin of the larger lattice constants in the DCSP-grown films. A striking difference was also present in the photoluminescence characteristics in MOCVD-grown films and DCSP-grown films; the photoluminescence peak originating from the self- trapping excitons observed in MOCVD-films disappeared in DCSP-films.

KW - CVD

KW - Epitaxy

KW - Rutherford backscattering spectroscopy

KW - Sputtering

KW - Titanium oxide

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