Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells

Tomoko Mizutani, Yoshiki Yamamoto, Hideki Makiyama, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii, Toshiro Hiramoto

研究成果: Article査読

10 被引用数 (Scopus)

抄録

The minimum operation voltage (Vmin) of intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) static random access memory (SRAM) cells are measured and compared with those of conventional bulk SRAM cells in order to directly compare the worst cells. It is confirmed that the worst Vmin of 1 kbit SOTB SRAM cells is half that of 1 kbit bulk cells. The distribution of Vmin of 48 kbit SOTB and bulk SRAM cells are also measured and compared. The results show a great advantage of SOTB SRAM cells for lower power and lower voltage operation upon introducing SOTB, because of reduced VTH variability.

本文言語English
論文番号04EC18
ジャーナルJapanese journal of applied physics
53
4 SPEC. ISSUE
DOI
出版ステータスPublished - 2014 4月
外部発表はい

ASJC Scopus subject areas

  • 工学一般
  • 物理学および天文学一般

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