Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments

Takayoshi Kanbara; Taishi Takenobu; Tetsuo Takahashi; Yoshihiro Iwasa; Kazuhito Tsukagoshi; Yoshinobu Aoyagi; Hiromichi Kataura

doi:10.1063/1.2171481

Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments

Takayoshi Kanbara^*, Taishi Takenobu, Tetsuo Takahashi, Yoshihiro Iwasa, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Hiromichi Kataura

^*この研究の対応する著者

研究成果: Article › 査読

19 被引用数 (Scopus)

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The contact resistance (Rcont) between nanotube and metal electrodes was directly measured in a four-terminal configuration of field-effect transistors for individual single-walled carbon nanotube (SWNT) bundles and a multiwalled carbon nanotube (MWNT). Both Rcont and the nanotube resistance (RNT) in a semiconducting SWNT device drastically changed with gate voltage, while Rcont, being more than one-order smaller than Rcont in metallic SWNTs and MWNTs, was almost constant against the gate voltage. Carriers introduced either by gate voltage or chemical doping induced a rapid decrease in Rcont compared with the resistance of semiconducting SWNTs.

本文言語	English
論文番号	053118
ページ（範囲）	1-3
ページ数	3
ジャーナル	Applied Physics Letters
巻	88
号	5
DOI	https://doi.org/10.1063/1.2171481
出版ステータス	Published - 2006
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.2171481

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abstract = "The contact resistance (Rcont) between nanotube and metal electrodes was directly measured in a four-terminal configuration of field-effect transistors for individual single-walled carbon nanotube (SWNT) bundles and a multiwalled carbon nanotube (MWNT). Both Rcont and the nanotube resistance (RNT) in a semiconducting SWNT device drastically changed with gate voltage, while Rcont, being more than one-order smaller than Rcont in metallic SWNTs and MWNTs, was almost constant against the gate voltage. Carriers introduced either by gate voltage or chemical doping induced a rapid decrease in Rcont compared with the resistance of semiconducting SWNTs.",

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AU - Kanbara, Takayoshi

AU - Takenobu, Taishi

AU - Takahashi, Tetsuo

AU - Iwasa, Yoshihiro

AU - Tsukagoshi, Kazuhito

AU - Aoyagi, Yoshinobu

AU - Kataura, Hiromichi

PY - 2006

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N2 - The contact resistance (Rcont) between nanotube and metal electrodes was directly measured in a four-terminal configuration of field-effect transistors for individual single-walled carbon nanotube (SWNT) bundles and a multiwalled carbon nanotube (MWNT). Both Rcont and the nanotube resistance (RNT) in a semiconducting SWNT device drastically changed with gate voltage, while Rcont, being more than one-order smaller than Rcont in metallic SWNTs and MWNTs, was almost constant against the gate voltage. Carriers introduced either by gate voltage or chemical doping induced a rapid decrease in Rcont compared with the resistance of semiconducting SWNTs.

AB - The contact resistance (Rcont) between nanotube and metal electrodes was directly measured in a four-terminal configuration of field-effect transistors for individual single-walled carbon nanotube (SWNT) bundles and a multiwalled carbon nanotube (MWNT). Both Rcont and the nanotube resistance (RNT) in a semiconducting SWNT device drastically changed with gate voltage, while Rcont, being more than one-order smaller than Rcont in metallic SWNTs and MWNTs, was almost constant against the gate voltage. Carriers introduced either by gate voltage or chemical doping induced a rapid decrease in Rcont compared with the resistance of semiconducting SWNTs.

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Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments

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