抄録
Improving SWCNT device performance, namely, the precise control of carrier density using organic molecules by a solution process was carried out. Controlled carrier doping of SWCNT films using optical absorption measurements was confirmed and applied to a SWCNT-bundle FET. Saturation was observed at each doping level and increased slightly with doping. The evolution of SWCNT electronics is the tuning of switching voltages, since this is directly related to the power consumption of the devices.
本文言語 | English |
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ページ(範囲) | 2430-2434 |
ページ数 | 5 |
ジャーナル | Advanced Materials |
巻 | 17 |
号 | 20 |
DOI | |
出版ステータス | Published - 2005 10月 17 |
外部発表 | はい |
ASJC Scopus subject areas
- 材料科学(全般)