Control of carrier density by self-assembled monolayers in organic field-effect transistors

S. Kobayashi; T. Nishikawa; T. Takenobu; S. Mori; T. Shimoda; T. Mitani; H. Shimotani; N. Yoshimoto; S. Ogawa; Y. Iwasa

doi:10.1038/nmat1105

Control of carrier density by self-assembled monolayers in organic field-effect transistors

S. Kobayashi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda, T. Mitani, H. Shimotani, N. Yoshimoto, S. Ogawa, Y. Iwasa^*

^*この研究の対応する著者

研究成果: Article › 査読

822 被引用数 (Scopus)

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The control of carrier density by self-assembled monolayers (SAM) in organic field-effect transistors is discussed. Organic thin-film transistors show high field-effect mobility in several organic materials. In the field-effect device structures, the conduction channel exists at the interface between organic thin films and SiO₂ gate insulators. It is found that SAM with fluorine and amino groups accumulate holes and electrons respectively in the transistor channel.

本文言語	English
ページ（範囲）	317-322
ページ数	6
ジャーナル	Nature Materials
巻	3
号	5
DOI	https://doi.org/10.1038/nmat1105
出版ステータス	Published - 2004 5月
外部発表	はい

ASJC Scopus subject areas

工学（全般）

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10.1038/nmat1105

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author = "S. Kobayashi and T. Nishikawa and T. Takenobu and S. Mori and T. Shimoda and T. Mitani and H. Shimotani and N. Yoshimoto and S. Ogawa and Y. Iwasa",

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AU - Nishikawa, T.

AU - Takenobu, T.

AU - Mori, S.

AU - Shimoda, T.

AU - Mitani, T.

AU - Shimotani, H.

AU - Yoshimoto, N.

AU - Ogawa, S.

AU - Iwasa, Y.

PY - 2004/5

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N2 - The control of carrier density by self-assembled monolayers (SAM) in organic field-effect transistors is discussed. Organic thin-film transistors show high field-effect mobility in several organic materials. In the field-effect device structures, the conduction channel exists at the interface between organic thin films and SiO2 gate insulators. It is found that SAM with fluorine and amino groups accumulate holes and electrons respectively in the transistor channel.

AB - The control of carrier density by self-assembled monolayers (SAM) in organic field-effect transistors is discussed. Organic thin-film transistors show high field-effect mobility in several organic materials. In the field-effect device structures, the conduction channel exists at the interface between organic thin films and SiO2 gate insulators. It is found that SAM with fluorine and amino groups accumulate holes and electrons respectively in the transistor channel.

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Control of carrier density by self-assembled monolayers in organic field-effect transistors

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