TY - GEN
T1 - Crystal growth of 4H-SiC on 6H-SiC by traveling solvent method
AU - Kusunoki, Kazuhiko
AU - Kamei, Kazuhito
AU - Yashiro, Nobuyoshi
AU - Moriguchi, Koji
AU - Okada, Nobuhiro
PY - 2011
Y1 - 2011
N2 - We attempted the traveling solvent method (TSM) growth of SiC on 6H-SiC(0001) substrates using Si and Si-M (M=Ti, Cr and Dy) solvents at growth temperatures of 1500-1800°C. It was confirmed that 4H-SiC polytype was extremely stabilized in the highly carbon dissolved liquid phase. 4H-SiC growth on 6H-SiC, i.e. hetropolytype epitaxial growth, was observed only from Si-Dy solvent. The Dy content above 60at% was necessary to obtain 100% 4H-SiC polytype.
AB - We attempted the traveling solvent method (TSM) growth of SiC on 6H-SiC(0001) substrates using Si and Si-M (M=Ti, Cr and Dy) solvents at growth temperatures of 1500-1800°C. It was confirmed that 4H-SiC polytype was extremely stabilized in the highly carbon dissolved liquid phase. 4H-SiC growth on 6H-SiC, i.e. hetropolytype epitaxial growth, was observed only from Si-Dy solvent. The Dy content above 60at% was necessary to obtain 100% 4H-SiC polytype.
KW - 4H-SiC
KW - Heteropolytype epitaxial growth
KW - Traveling solvent method
UR - http://www.scopus.com/inward/record.url?scp=79955125632&partnerID=8YFLogxK
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U2 - 10.4028/www.scientific.net/MSF.679-680.36
DO - 10.4028/www.scientific.net/MSF.679-680.36
M3 - Conference contribution
AN - SCOPUS:79955125632
SN - 9783037850794
VL - 679-680
T3 - Materials Science Forum
SP - 36
EP - 39
BT - Materials Science Forum
T2 - 8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010
Y2 - 29 August 2010 through 2 September 2010
ER -