@inproceedings{b9667b4ca532484fb7ecb541b7eb313c,
title = "Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution",
abstract = "Crystallinity of 4H-SiC bulk crystals obtained by solution growth technique was characterized mainly by KOH etching of the off-ground and serially ground specimens. Marked reduction of basal plane dislocations, threading edge and screw dislocations during the growth of the on-axis crystal was confirmed. Cross-sectional TEM observation revealed the rapid reduction behavior of threading dislocations microscopically. AFM observation of as-grown morphology showed that screw dislocation dipoles are related to the reduction of threading screw dislocations and single domain formation, which is essential for establishing the high crystallinity.",
keywords = "4H-SiC, AFM, Dislocation, EPD, Solution growth, TEM, Ti",
author = "K. Kamei and K. Kusunoki and N. Yashiro and N. Okada and K. Moriguchi and H. Daikoku and M. Kado and H. Suzuki and H. Sakamoto and T. Bessho",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.45",
language = "English",
isbn = "9783037854198",
volume = "717-720",
series = "Materials Science Forum",
pages = "45--48",
booktitle = "Materials Science Forum",
note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
}