TY - GEN
T1 - Cu-Cu direct bonding by introducing Au intermediate layer
AU - Noma, Hirokazu
AU - Kamibayashi, Takumi
AU - Kuwae, Hiroyuki
AU - Suzuki, Naoya
AU - Nonaka, Toshihisa
AU - Shoji, Shuichi
AU - Mizuno, Jun
N1 - Publisher Copyright:
© 2017 JSPS 191st Committee on Innovative Interface Bonding Technology.
PY - 2017/6/13
Y1 - 2017/6/13
N2 - Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.
AB - Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.
UR - http://www.scopus.com/inward/record.url?scp=85022177982&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85022177982&partnerID=8YFLogxK
U2 - 10.23919/LTB-3D.2017.7947466
DO - 10.23919/LTB-3D.2017.7947466
M3 - Conference contribution
AN - SCOPUS:85022177982
T3 - Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
SP - 70
BT - Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
Y2 - 16 May 2017 through 18 May 2017
ER -