TY - GEN
T1 - Cu-Cu Quasi-Direct Bonding with Atomically Thin-Au and Pt Intermediate Layer Using Atomic Layer Deposition
AU - Kuwae, Hiroyuki
AU - Yamada, Kosuke
AU - Momose, Wataru
AU - Shoji, Shuichi
AU - Mizuno, Jun
N1 - Funding Information:
ACKNOWLEDGMENT The authors thank Philippe de Rouffignac, PhD, (Anric Technologies) for support on Au ALD process. This work was partly supported by the Japan Ministry of Education, Culture, Sport Science & Technology (MEXT) through Grants-in-Aid for Scientific Basic Research (A) (No. 16H02349) and Young Scientists (No. 18K13770). We thank the MEXT Nanotechnology Platform Support Project of Waseda University. H.K. was supported by the Early Bird Program of Waseda University, and the cooperative between Waseda University and JXTG Nippon Oil & Energy Corporation.
Publisher Copyright:
© 2019 Japan Institute of Electronics Packaging.
PY - 2019/4
Y1 - 2019/4
N2 - A low temperature Cu-Cu bonding technique using an atomically thin-Pt intermediate layer deposited by atomic layer deposition (ALD) was recently reported. In this study, we investigated the characteristic of the Cu-Cu quasi-direct bonding using different metal intermediate layers. A thin-Pt or Au intermediate layer were deposited on the Cu surface by ALD in angstrom level. Both the thin-Pt and the Au intermediate layer successfully improved the Cu-Cu bonding strength compared with that without thin-metal intermediate layer. Although Au is widely used as a thick-intermediate layer in conventional Cu-Cu bonding methods, the Cu-Cu quasi-direct bonding with thin-Pt layer obtained three times lager bonding strength (9.52 MPa) than that with thin-Au layer (3.20 MPa). These results are essential for developing low temperature Cu-Cu bonding for highly integrated 3D IC chips.
AB - A low temperature Cu-Cu bonding technique using an atomically thin-Pt intermediate layer deposited by atomic layer deposition (ALD) was recently reported. In this study, we investigated the characteristic of the Cu-Cu quasi-direct bonding using different metal intermediate layers. A thin-Pt or Au intermediate layer were deposited on the Cu surface by ALD in angstrom level. Both the thin-Pt and the Au intermediate layer successfully improved the Cu-Cu bonding strength compared with that without thin-metal intermediate layer. Although Au is widely used as a thick-intermediate layer in conventional Cu-Cu bonding methods, the Cu-Cu quasi-direct bonding with thin-Pt layer obtained three times lager bonding strength (9.52 MPa) than that with thin-Au layer (3.20 MPa). These results are essential for developing low temperature Cu-Cu bonding for highly integrated 3D IC chips.
KW - Cu-Cu bonding
KW - atomic layer deposition
KW - metal intermidiate layer
KW - thermo compression bonding
UR - http://www.scopus.com/inward/record.url?scp=85068342508&partnerID=8YFLogxK
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U2 - 10.23919/ICEP.2019.8733483
DO - 10.23919/ICEP.2019.8733483
M3 - Conference contribution
AN - SCOPUS:85068342508
T3 - 2019 International Conference on Electronics Packaging, ICEP 2019
SP - 207
EP - 211
BT - 2019 International Conference on Electronics Packaging, ICEP 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 International Conference on Electronics Packaging, ICEP 2019
Y2 - 17 April 2019 through 20 April 2019
ER -