TY - JOUR
T1 - Cu film growth on a Si(111) surface studied by scanning tunneling microscopy
AU - Tomimatsu, Satoshi
AU - Hasegawa, Tsuyoshi
AU - Kohno, Makiko
AU - Hosoki, Shigeyuki
PY - 1996/6
Y1 - 1996/6
N2 - We observed a change in growth mode of Cu. while dynamically observing Cu film growth on a Si(111)-7 ×7 surface during Cu deposition at room temperature by scanning tunneling microscopy (STM). Initially, Cu atoms were adsorbed mostly on the faulted halves of the 7×7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the coverage increased from 2 to 3 ML, the growth mode changed into quasi-layer-by-layer growth. With further deposition, 3-D islands having hexagonal terraces grew.
AB - We observed a change in growth mode of Cu. while dynamically observing Cu film growth on a Si(111)-7 ×7 surface during Cu deposition at room temperature by scanning tunneling microscopy (STM). Initially, Cu atoms were adsorbed mostly on the faulted halves of the 7×7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the coverage increased from 2 to 3 ML, the growth mode changed into quasi-layer-by-layer growth. With further deposition, 3-D islands having hexagonal terraces grew.
KW - 3-D island
KW - Cu
KW - DAS structure
KW - Quasi-layer-by-layer
KW - Si(111)
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U2 - 10.1143/jjap.35.3730
DO - 10.1143/jjap.35.3730
M3 - Article
AN - SCOPUS:0030172848
SN - 0021-4922
VL - 35
SP - 3730
EP - 3733
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 6 SUPPL. B
ER -