Cubic InGaN/GaN double-heterostructure light emitting diodes grown on GaAs (001) substrates by MOVPE

Y. Taniyasu*, K. Suzuki, D. H. Lim, A. W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi


研究成果: Conference article査読

27 被引用数 (Scopus)


Cubic (zinc-blende) InGaN/GaN double-heterostructure LEDs were fabricated on GaAs (001) substrates. The device performance and crystal quality were investigated. The emission wavelength was controlled by the In content in the cubic InGaN active layer. The violet-blue electroluminescence was observed around 435 nm with a FWHM of 55 nm from a cubic In0.07Ga0.93N/GaN DH LED. The forward voltage was 4.9 V at 20 mA and the reverse leakage current was 5 mA at -10 V. X-ray reciprocal space mapping measurement was performed to investigate the phase purity and strain in InGaN/GaN heterostructure. The mixing of the stable hexagonal phase in the cubic GaN was observed and the hexagonal phase content was about 10%. In-situ spectroscopic ellipsometry measurement showed that most of the mixed hexagonal domains were likely to be formed in the Mg-doped GaN layer. In addition, the anisotropic lattice relaxation occurred in the InGaN active layer. The elimination of the hexagonal phase inclusions plays an important role for the realization of high performance devices.

ジャーナルPhysica Status Solidi (A) Applied Research
出版ステータスPublished - 2000 7月
イベント3rd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen/Berlin, Ger
継続期間: 2000 3月 62000 3月 10

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学


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