Deep sub-micron gate diamond MISFETs

Hiroki Matsudaira; Arima Takuya; Hitoshi Umezawa; Shingo Miyamoto; Hiroaki Ishizaka; Minoru Tachiki; Hiroshi Kawarada

doi:10.1016/S0925-9635(03)00273-5

Deep sub-micron gate diamond MISFETs

Hiroki Matsudaira^*, Arima Takuya, Hitoshi Umezawa, Shingo Miyamoto, Hiroaki Ishizaka, Minoru Tachiki, Hiroshi Kawarada

^*この研究の対応する著者

基幹理工学部

研究成果: Article › 査読

11 被引用数 (Scopus)

抄録

The basic characteristics of the short channel FETs have been investigated for the high-frequency performance of the diamond MISFETs. The deep sub-micron gate (0.23-0.5 μm) diamond MISFETs were fabricated on an H-terminated diamond surface. The short channel effect is well suppressed utilizing thin gate insulator. Accordingly, the transconductance is improved by reduction of gate length down to 0.2 μm. This tendency is observed in diamond MISFETs for the first time. Maximum transconductance reaches 71 mS/mm in DC mode and 51 mS/mm in AC mode. The f _T of 40 GHz is expected in 0.2 μm gate MISFETs as a result.

本文言語	English
ページ（範囲）	1814-1818
ページ数	5
ジャーナル	Diamond and Related Materials
巻	12
号	10-11
DOI	https://doi.org/10.1016/S0925-9635(03)00273-5
出版ステータス	Published - 2003

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
化学 (全般)
機械工学
材料化学
電子工学および電気工学

文献へのアクセス

10.1016/S0925-9635(03)00273-5

他のファイルとリンク

引用スタイル

@article{9cee0b81c70743d8980d1b21782a79a6,

title = "Deep sub-micron gate diamond MISFETs",

abstract = "The basic characteristics of the short channel FETs have been investigated for the high-frequency performance of the diamond MISFETs. The deep sub-micron gate (0.23-0.5 μm) diamond MISFETs were fabricated on an H-terminated diamond surface. The short channel effect is well suppressed utilizing thin gate insulator. Accordingly, the transconductance is improved by reduction of gate length down to 0.2 μm. This tendency is observed in diamond MISFETs for the first time. Maximum transconductance reaches 71 mS/mm in DC mode and 51 mS/mm in AC mode. The f T of 40 GHz is expected in 0.2 μm gate MISFETs as a result.",

keywords = "Diamond MISFETs, Sub-micron gate, Transconductance",

author = "Hiroki Matsudaira and Arima Takuya and Hitoshi Umezawa and Shingo Miyamoto and Hiroaki Ishizaka and Minoru Tachiki and Hiroshi Kawarada",

note = "Funding Information: This work is supported in part by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan. This work is also supported partially by Advanced Research Institute for Science and Engineering, Waseda University.",

year = "2003",

doi = "10.1016/S0925-9635(03)00273-5",

language = "English",

volume = "12",

pages = "1814--1818",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "10-11",

}

TY - JOUR

T1 - Deep sub-micron gate diamond MISFETs

AU - Matsudaira, Hiroki

AU - Takuya, Arima

AU - Umezawa, Hitoshi

AU - Miyamoto, Shingo

AU - Ishizaka, Hiroaki

AU - Tachiki, Minoru

AU - Kawarada, Hiroshi

N1 - Funding Information: This work is supported in part by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan. This work is also supported partially by Advanced Research Institute for Science and Engineering, Waseda University.

PY - 2003

Y1 - 2003

N2 - The basic characteristics of the short channel FETs have been investigated for the high-frequency performance of the diamond MISFETs. The deep sub-micron gate (0.23-0.5 μm) diamond MISFETs were fabricated on an H-terminated diamond surface. The short channel effect is well suppressed utilizing thin gate insulator. Accordingly, the transconductance is improved by reduction of gate length down to 0.2 μm. This tendency is observed in diamond MISFETs for the first time. Maximum transconductance reaches 71 mS/mm in DC mode and 51 mS/mm in AC mode. The f T of 40 GHz is expected in 0.2 μm gate MISFETs as a result.

AB - The basic characteristics of the short channel FETs have been investigated for the high-frequency performance of the diamond MISFETs. The deep sub-micron gate (0.23-0.5 μm) diamond MISFETs were fabricated on an H-terminated diamond surface. The short channel effect is well suppressed utilizing thin gate insulator. Accordingly, the transconductance is improved by reduction of gate length down to 0.2 μm. This tendency is observed in diamond MISFETs for the first time. Maximum transconductance reaches 71 mS/mm in DC mode and 51 mS/mm in AC mode. The f T of 40 GHz is expected in 0.2 μm gate MISFETs as a result.

KW - Diamond MISFETs

KW - Sub-micron gate

KW - Transconductance

UR - http://www.scopus.com/inward/record.url?scp=0346119976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0346119976&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(03)00273-5

DO - 10.1016/S0925-9635(03)00273-5

M3 - Article

AN - SCOPUS:0346119976

SN - 0925-9635

VL - 12

SP - 1814

EP - 1818

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 10-11

ER -

Deep sub-micron gate diamond MISFETs

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル