Degradation of n+/p junction characteristics by aluminum contamination

Toshihiko Itoga*, Hisao Kojima, Atsushi Hiraiwa, Makoto Ohkura

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

This paper discusses the effects of Al contamination on n+/p junction characteristics. The Al contamination occurs during ion implantation and the level can be as high as one tenth of the implanted dose. The Al contamination leads to an increase in the n+/p junction leakage current and a decrease in breakdown voltage. This is due to the increase of SiO2/Si interface state density and fixed negative charge in SiO2 film. The contaminating Al is segregated in the SiO2 film and remains very close to the oxide surface even in nm-order SiO2 (less than 10 nm), and the influence of Al becomes greater as SiO2 thickness decreases. Since Al is, and will continue to be, the most widely used material for process equipment, Al contamination control might become one of the key issues in achieving highly reliable future giga-scale ULSIs.

本文言語English
ページ(範囲)4431-4434
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
7 A
出版ステータスPublished - 1997 7月
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)
  • 工学一般

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