抄録
This paper discusses the effects of Al contamination on SiO2/Si interface characteristics. The interface state density increases as the Al contamination level increases, and the influence is greater when the oxide layer becomes thinner. This is because contaminating Al is segregated in the oxide layer and remains very close to the oxide surface. Since Al is, and will continue to be, the most widely used material for process equipments, Al contamination control might become one of the key issues in achieving future giga-scale ULSIs.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | Conference on Solid State Devices and Materials |
| Place of Publication | Tokyo, Japan |
| 出版社 | Publ by Business Cent for Acad Soc Japan |
| ページ | 434-436 |
| ページ数 | 3 |
| 出版ステータス | Published - 1992 |
| 外部発表 | はい |
| イベント | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn 継続期間: 1992 8月 26 → 1992 8月 28 |
Other
| Other | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 |
|---|---|
| City | Tsukuba, Jpn |
| Period | 92/8/26 → 92/8/28 |
ASJC Scopus subject areas
- 工学（全般）