Delta p+-doped InGaAs grown by gas source MBE for novel optoelectronic memory

H. Sakata; Y. Nagao; Yuichi Matsushima

doi:10.1016/S0022-0248(98)01523-1

Delta p⁺-doped InGaAs grown by gas source MBE for novel optoelectronic memory

H. Sakata^*, Y. Nagao, Yuichi Matsushima

^*この研究の対応する著者

研究成果: Article › 査読

3 被引用数 (Scopus)

抄録

We report a novel optoelectronic memory characteristic in `Symmetric Triangular-barrier Optoelectronic Switch (S-TOPS)', which consists of a symmetric n⁺-i-δp⁺-i-n^- structure of In_0.53Ga_0.47As grown by gas source molecular beam epitaxy. The memory state can be set by electrical and optical signal, and the memory state can be held about 10 min without supplying any electrical power.

本文言語	English
ページ（範囲）	1065-1068
ページ数	4
ジャーナル	Journal of Crystal Growth
巻	201
DOI	https://doi.org/10.1016/S0022-0248(98)01523-1
出版ステータス	Published - 1999 5月
外部発表	はい

ASJC Scopus subject areas

凝縮系物理学

文献へのアクセス

10.1016/S0022-0248(98)01523-1

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引用スタイル

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abstract = "We report a novel optoelectronic memory characteristic in `Symmetric Triangular-barrier Optoelectronic Switch (S-TOPS)', which consists of a symmetric n+-i-δp+-i-n- structure of In0.53Ga0.47As grown by gas source molecular beam epitaxy. The memory state can be set by electrical and optical signal, and the memory state can be held about 10 min without supplying any electrical power.",

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AB - We report a novel optoelectronic memory characteristic in `Symmetric Triangular-barrier Optoelectronic Switch (S-TOPS)', which consists of a symmetric n+-i-δp+-i-n- structure of In0.53Ga0.47As grown by gas source molecular beam epitaxy. The memory state can be set by electrical and optical signal, and the memory state can be held about 10 min without supplying any electrical power.

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