抄録
We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 17554-17559 |
| ページ数 | 6 |
| ジャーナル | Optics Express |
| 巻 | 16 |
| 号 | 22 |
| DOI | |
| 出版ステータス | Published - 2008 10月 27 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 原子分子物理学および光学