TY - GEN
T1 - Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers
AU - Hasebe, Koichi
AU - Nishinaka, Junichi
AU - Fujii, Takuro
AU - Takeda, Koji
AU - Yamamoto, Tsuyoshi
AU - Kakitsuka, Takaaki
AU - Matsuo, Shinji
N1 - Publisher Copyright:
� 2016 IEEE.
PY - 2016/8/1
Y1 - 2016/8/1
N2 - We designed and fabricated lateral-current-injection (LCI) Fabry-Perot (FP) lasers for the 1.3-μm wavelength region. The devices were fabricated using selective doping by means of thermal diffusion and ion implantation to make pn junctions. To increase the optical confinement factor in the active region, we used an InGaAlAs-based 20-quantum-well structure. The device exhibited a threshold current of 16 mA and differential efficiency of 47% for a 400-μm long and 0.5-μm wide cavity. We also measured the relative intensity noise (RIN) spectrum to obtain parameters for the direct modulation. The LCI FP laser provided both high output power and high relaxation oscillation frequency.
AB - We designed and fabricated lateral-current-injection (LCI) Fabry-Perot (FP) lasers for the 1.3-μm wavelength region. The devices were fabricated using selective doping by means of thermal diffusion and ion implantation to make pn junctions. To increase the optical confinement factor in the active region, we used an InGaAlAs-based 20-quantum-well structure. The device exhibited a threshold current of 16 mA and differential efficiency of 47% for a 400-μm long and 0.5-μm wide cavity. We also measured the relative intensity noise (RIN) spectrum to obtain parameters for the direct modulation. The LCI FP laser provided both high output power and high relaxation oscillation frequency.
KW - direct modulation
KW - lateral current injection
KW - semiconductor laser
UR - http://www.scopus.com/inward/record.url?scp=84992029474&partnerID=8YFLogxK
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U2 - 10.1109/ICIPRM.2016.7528753
DO - 10.1109/ICIPRM.2016.7528753
M3 - Conference contribution
AN - SCOPUS:84992029474
T3 - 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
BT - 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 Compound Semiconductor Week, CSW 2016
Y2 - 26 June 2016 through 30 June 2016
ER -