DESIGN AND OPERATION OF 3 mu m BUBBLE SINGLE-MASK-LEVEL SERIAL LOOP DEVICE.

Yoshio Sato*, Tsutomu Miyashita, Hirochika Nakajima

*この研究の対応する著者

研究成果: Article査読

抄録

An all-permalloy single-mask level design for serial loop devices using 3 mu m bubbles has been developed and successfully operated. The design of individual elements for single-mask level devices such as generators, replicators and annihilators which were compatible with half-disk propagation patterns was successfully tested, and optimization of permalloy and SiO//2 film thickness was achieved. The small-capacity test chips fabricated provided 13-16 Oe ″window margins″ with circular drive field ranges of 40 to 50 Oe at 100 kHz. The critical stretching pulse phase margin for replication, which was the minimum phase margin for all functions, was found to be 10 degrees. Details of design and characteristics are discussed including operating margin dependence on frequency, temperature and long term characteristics.

本文言語English
ページ(範囲)45-63
ページ数19
ジャーナルFujitsu Scientific and Technical Journal
15
2
出版ステータスPublished - 1979 6月
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学

フィンガープリント

「DESIGN AND OPERATION OF 3 mu m BUBBLE SINGLE-MASK-LEVEL SERIAL LOOP DEVICE.」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル