TY - GEN
T1 - Development and evaluation of SiC inverter using Ni micro plating bonding power module
AU - Kawagoe, Akihiro
AU - Itose, Tomoya
AU - Imakiire, Akihiro
AU - Kozako, Masahiro
AU - Hikita, Masayuki
AU - Tatsumi, Kohei
AU - Iizuka, Tomonori
AU - Morisako, Isamu
AU - Sato, Nobuaki
AU - Shimizu, Koji
AU - Ueda, Kazutoshi
AU - Sugiura, Kazuhiko
AU - Tsuruta, Kazuhiro
AU - Toda, Keiji
N1 - Funding Information:
ACKNOWLEDGMENT This work was partly supported by Cross-Mministerial Strategic Innovation Promotion Program (SIP), and ”Next generation power electronics / Research and development of packaging technology for high temperature resistant SiC module of hybrid automobile of next-generation SiC power electronics”(funding agency: NEDO).
Publisher Copyright:
© 2019 IEEE.
PY - 2019/4
Y1 - 2019/4
N2 - This paper reports on evaluation of inverter system using silicon carbide (SiC) power module with a novel packaging technology of Ni micro plating bonding. The power module is developed to make the structure maximize the performance of SiC attracting attention in recent years. As a result, it was found that the developed inverter reduces the inverter loss and improves the efficiency of the entire inverter system as compared with in-vehicle product using Si-IGBT and the inverter consisting of the conventional package structure using SiC MOSFET. Moreover, it was confirmed that switching was possible even when the chip temperature exceeded 200°C, suggesting that the developed inverter can be driven under the high temperature environment.
AB - This paper reports on evaluation of inverter system using silicon carbide (SiC) power module with a novel packaging technology of Ni micro plating bonding. The power module is developed to make the structure maximize the performance of SiC attracting attention in recent years. As a result, it was found that the developed inverter reduces the inverter loss and improves the efficiency of the entire inverter system as compared with in-vehicle product using Si-IGBT and the inverter consisting of the conventional package structure using SiC MOSFET. Moreover, it was confirmed that switching was possible even when the chip temperature exceeded 200°C, suggesting that the developed inverter can be driven under the high temperature environment.
KW - Efficiency
KW - Inverter
KW - Ni micro plating bonding
KW - Silicon Carbide (SiC)
UR - http://www.scopus.com/inward/record.url?scp=85071582937&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85071582937&partnerID=8YFLogxK
U2 - 10.1109/IWIPP.2019.8799079
DO - 10.1109/IWIPP.2019.8799079
M3 - Conference contribution
AN - SCOPUS:85071582937
T3 - 2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019
SP - 36
EP - 39
BT - 2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 3rd IEEE International Workshop on Integrated Power Packaging, IWIPP 2019
Y2 - 24 April 2019 through 26 April 2019
ER -