Development of a Si/CdTe semiconductor Compton telescope

Takaaki Tanaka; Takefumi Mitani; Shin Watanabe; Kazuhiro Nakazawa; Kousuke Oonuki; Goro Sato; Tadayuki Takahashi; Ken'ichi Tamura; Hiroyasu Tajima; Hidehito Nakamura; Masaharu Nomachi; Tatsuya Nakamoto; Yasushi Fukazawa

doi:10.1117/12.552600

Development of a Si/CdTe semiconductor Compton telescope

Takaaki Tanaka^*, Takefumi Mitani, Shin Watanabe, Kazuhiro Nakazawa, Kousuke Oonuki, Goro Sato, Tadayuki Takahashi, Ken'ichi Tamura, Hiroyasu Tajima, Hidehito Nakamura, Masaharu Nomachi, Tatsuya Nakamoto, Yasushi Fukazawa

^*この研究の対応する著者

理工学術院総合研究所

研究成果: Article › 査読

27 被引用数 (Scopus)

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We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9° and 5.7° at 122 keV and 356 keV, respectively.

本文言語	English
論文番号	28
ページ（範囲）	229-240
ページ数	12
ジャーナル	Unknown Journal
巻	5501
DOI	https://doi.org/10.1117/12.552600
出版ステータス	Published - 2004

ASJC Scopus subject areas

電子工学および電気工学
凝縮系物理学

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10.1117/12.552600

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title = "Development of a Si/CdTe semiconductor Compton telescope",

abstract = "We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9° and 5.7° at 122 keV and 356 keV, respectively.",

keywords = "CdTe, Compton telescope, Gamma-ray, Semicondictor detector, Silicon Strip Detector",

author = "Takaaki Tanaka and Takefumi Mitani and Shin Watanabe and Kazuhiro Nakazawa and Kousuke Oonuki and Goro Sato and Tadayuki Takahashi and Ken'ichi Tamura and Hiroyasu Tajima and Hidehito Nakamura and Masaharu Nomachi and Tatsuya Nakamoto and Yasushi Fukazawa",

year = "2004",

doi = "10.1117/12.552600",

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T1 - Development of a Si/CdTe semiconductor Compton telescope

AU - Tanaka, Takaaki

AU - Mitani, Takefumi

AU - Watanabe, Shin

AU - Nakazawa, Kazuhiro

AU - Oonuki, Kousuke

AU - Sato, Goro

AU - Takahashi, Tadayuki

AU - Tamura, Ken'ichi

AU - Tajima, Hiroyasu

AU - Nakamura, Hidehito

AU - Nomachi, Masaharu

AU - Nakamoto, Tatsuya

AU - Fukazawa, Yasushi

PY - 2004

Y1 - 2004

N2 - We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9° and 5.7° at 122 keV and 356 keV, respectively.

AB - We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9° and 5.7° at 122 keV and 356 keV, respectively.

KW - CdTe

KW - Compton telescope

KW - Gamma-ray

KW - Semicondictor detector

KW - Silicon Strip Detector

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DO - 10.1117/12.552600

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SN - 0375-9474

VL - 5501

SP - 229

EP - 240

JO - Nuclear Physics A

JF - Nuclear Physics A

M1 - 28

ER -

Development of a Si/CdTe semiconductor Compton telescope

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