TY - JOUR
T1 - Development of an ASIC for Si/CdTe detectors in a radioactive substance visualizing system
AU - Harayama, Atsushi
AU - Takeda, Shinichiro
AU - Sato, Goro
AU - Ikeda, Hirokazu
AU - Watanabe, Shin
AU - Takahashi, Tadayuki
PY - 2014/11/21
Y1 - 2014/11/21
N2 - We report on the recent development of a 64-channel analog front-end ASIC for a new gamma-ray imaging system designed to visualize radioactive substances. The imaging system employs a novel Compton camera which consists of silicon (Si) and cadmium telluride (CdTe) detectors. The ASIC is intended for the readout of pixel/pad detectors utilizing Si/CdTe as detector materials, and covers a dynamic range up to 1.4 MeV. The readout chip consists of 64 identical signal channels and was implemented with X-FAB 0.35μm CMOS technology. Each channel contains a charge-sensitive amplifier, a pole-zero cancellation circuit, a low-pass filter, a comparator, and a sample-hold circuit, along with a Wilkinson-type A-to-D converter. We observed an equivalent noise charge of ∼500 e- and a noise slope of ∼5 e-/pF (r.m.s.) with a power consumption of 2.1 mW per channel. The chip works well when connected to Schottky CdTe diodes, and delivers spectra with good energy resolution, such as ∼12 keV (FWHM) at 662 keV and ∼24 keV (FWHM) at 1.33 MeV.
AB - We report on the recent development of a 64-channel analog front-end ASIC for a new gamma-ray imaging system designed to visualize radioactive substances. The imaging system employs a novel Compton camera which consists of silicon (Si) and cadmium telluride (CdTe) detectors. The ASIC is intended for the readout of pixel/pad detectors utilizing Si/CdTe as detector materials, and covers a dynamic range up to 1.4 MeV. The readout chip consists of 64 identical signal channels and was implemented with X-FAB 0.35μm CMOS technology. Each channel contains a charge-sensitive amplifier, a pole-zero cancellation circuit, a low-pass filter, a comparator, and a sample-hold circuit, along with a Wilkinson-type A-to-D converter. We observed an equivalent noise charge of ∼500 e- and a noise slope of ∼5 e-/pF (r.m.s.) with a power consumption of 2.1 mW per channel. The chip works well when connected to Schottky CdTe diodes, and delivers spectra with good energy resolution, such as ∼12 keV (FWHM) at 662 keV and ∼24 keV (FWHM) at 1.33 MeV.
KW - Analog front-end
KW - ASIC
KW - Gamma ray
KW - Si/CdTe
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U2 - 10.1016/j.nima.2014.05.030
DO - 10.1016/j.nima.2014.05.030
M3 - Article
AN - SCOPUS:84908349362
SN - 0168-9002
VL - 765
SP - 223
EP - 226
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
ER -