Development of an epitaxial growth technique using iii-v on a si platform for heterogeneous integration of membrane photonic devices on si

Engineering & Materials Science

• Aluminum gallium arsenide 26%
• Costs 9%
• Crystals 12%
• Degradation 8%
• Distributed feedback lasers 20%
• Energy gap 28%
• Epitaxial growth 89%
• Fabrication 18%
• Gallium arsenide 18%
• III-V semiconductors 21%
• Indium 33%
• Integrated circuits 35%
• Lasers 9%
• Lattice mismatch 22%
• Light sources 13%
• Membranes 53%
• Modulation 9%
• Modulators 13%
• Optical transmitters 19%
• Phase boundaries 17%
• Photonic devices 100%
• Photonics 73%
• Semiconductor lasers 15%
• Semiconductor quantum wells 39%
• Substrates 17%
• Temperature 5%
• Thermal expansion 12%
• Transmitters 10%

Physics & Astronomy

• aluminum gallium arsenides 10%
• antiphase boundaries 12%
• butt joints 16%
• chips 8%
• costs 8%
• crystals 5%
• degradation 7%
• distributed feedback lasers 12%
• energy 3%
• evaluation 6%
• fabrication 12%
• indium 10%
• indium gallium arsenides 17%
• integrated circuits 30%
• lasers 4%
• light sources 8%
• manufacturing 8%
• membranes 46%
• modulation 7%
• modulators 9%
• phosphides 14%
• photonics 43%
• platforms 53%
• quantum wells 16%
• semiconductor lasers 8%
• temperature 3%
• thermal expansion 9%
• transmitters 20%

Chemical Compounds

• Antiphase Boundary 53%
• Band Gap 47%
• Energy 15%
• Semiconductor 24%
• Thermal Expansion 33%