Development of silsesquioxane-type gate insulating thin films for poly(3-hexylthiophene)-based field-effect transistor

T. Hamada; K. Tomatsu; T. Nagase; T. Kobayashi; S. Murakami; M. Watanabe; H. Naito; K. Matsukawa

Development of silsesquioxane-type gate insulating thin films for poly(3-hexylthiophene)-based field-effect transistor

T. Hamada^*, K. Tomatsu, T. Nagase, T. Kobayashi, S. Murakami, M. Watanabe, H. Naito, K. Matsukawa

^*この研究の対応する著者

研究成果: Paper › 査読

抄録

Silsesquioxane materials were prepared by a sol-gel method, which have many advantages such as low cost, solution processability, and so on. We have investigated polymethylsilsesquioxane (PMSQ)-type gate insulating thin films with good high resistivity and surface morphology. Top-contact organic field-effect transistors (OFET) devices were fabricated using PMSQ gate insulator and poly(3-hexylthiophene) (P3HT) as the organic semiconductor.

本文言語	English
ページ	599-600
ページ数	2
出版ステータス	Published - 2007
外部発表	はい
イベント	14th International Display Workshops, IDW '07 - Sapporo, Japan 継続期間: 2007 12月 5 → 2007 12月 5

Conference

Conference	14th International Display Workshops, IDW '07
国/地域	Japan
City	Sapporo
Period	07/12/5 → 07/12/5

ASJC Scopus subject areas

電子工学および電気工学
電子材料、光学材料、および磁性材料
放射線学、核医学およびイメージング
原子分子物理学および光学

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author = "T. Hamada and K. Tomatsu and T. Nagase and T. Kobayashi and S. Murakami and M. Watanabe and H. Naito and K. Matsukawa",

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AU - Hamada, T.

AU - Tomatsu, K.

AU - Nagase, T.

AU - Kobayashi, T.

AU - Murakami, S.

AU - Watanabe, M.

AU - Naito, H.

AU - Matsukawa, K.

PY - 2007

Y1 - 2007

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AB - Silsesquioxane materials were prepared by a sol-gel method, which have many advantages such as low cost, solution processability, and so on. We have investigated polymethylsilsesquioxane (PMSQ)-type gate insulating thin films with good high resistivity and surface morphology. Top-contact organic field-effect transistors (OFET) devices were fabricated using PMSQ gate insulator and poly(3-hexylthiophene) (P3HT) as the organic semiconductor.

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M3 - Paper

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T2 - 14th International Display Workshops, IDW '07

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ER -

Development of silsesquioxane-type gate insulating thin films for poly(3-hexylthiophene)-based field-effect transistor

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Conference

ASJC Scopus subject areas

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