TY - GEN
T1 - Diamond MISFETs fabricated on high quality polycrystalline CVD diamond
AU - Hirama, K.
AU - Takayanagi, H.
AU - Yamauchi, S.
AU - Jingu, Y.
AU - Umezawa, H.
AU - Kawarada, H.
PY - 2007/12/1
Y1 - 2007/12/1
N2 - Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) with a 0.1 μm gate length were fabricated on high quality Ha-type polycrystalline diamond. A maximum drain current density of 650 mA/mm and a cut-off frequency (fT) of 42 GHz were obtained. The drain current density is the highest value reported to date for diamond FETs.
AB - Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) with a 0.1 μm gate length were fabricated on high quality Ha-type polycrystalline diamond. A maximum drain current density of 650 mA/mm and a cut-off frequency (fT) of 42 GHz were obtained. The drain current density is the highest value reported to date for diamond FETs.
UR - http://www.scopus.com/inward/record.url?scp=39749089898&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=39749089898&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2007.4294984
DO - 10.1109/ISPSD.2007.4294984
M3 - Conference contribution
AN - SCOPUS:39749089898
SN - 1424410959
SN - 9781424410958
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 269
EP - 272
BT - Proceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07
T2 - 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07
Y2 - 27 May 2007 through 31 May 2007
ER -