Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition

Hiromitsu Kato; Shingo Sakai; Akihiro Takami; Yoshimichi Ohki; Keisuke Ishii

Dielectric breakdown in F-doped SiO₂ films formed by plasma-enhanced chemical vapor deposition

Hiromitsu Kato^*, Shingo Sakai, Akihiro Takami, Yoshimichi Ohki, Keisuke Ishii

^*この研究の対応する著者

先進理工学部

研究成果: Paper › 査読

抄録

Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF₄, and the dielectric strength was measured with a serf-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.

本文言語	English
ページ	368-371
ページ数	4
出版ステータス	Published - 1998 12月 1
イベント	Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics - Vasteras, Sweden 継続期間: 1998 6月 22 → 1998 6月 25

Other

Other	Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics
City	Vasteras, Sweden
Period	98/6/22 → 98/6/25

ASJC Scopus subject areas

工学（全般）

他のファイルとリンク

引用スタイル

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title = "Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition",

abstract = "Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF4, and the dielectric strength was measured with a serf-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.",

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AU - Takami, Akihiro

AU - Ohki, Yoshimichi

AU - Ishii, Keisuke

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF4, and the dielectric strength was measured with a serf-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.

AB - Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF4, and the dielectric strength was measured with a serf-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.

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