With synchrotron radiation from the storage ring ETL-TERAS, the influence of Fresnel diffraction on replicated patterns was investigated. Spatial intensity distributions due to the diffraction were calculated with Fresnel integrals and compared with replicated patterns. Pattern degradation due to the diffraction depends on a parameter U//0 equals W/(G//p lambda /2)** one-half , where W is the pattern width, G//p the mask-to-wafer distance, and lambda the wavelength. From the calculation and the experiments it is concluded that the value of U//0 is needed to be larger than about three for a satisfactory pattern replication. Work with an experimental stencil mask with patterns of submicron dimensions is also described briefly.
|ジャーナル||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版ステータス||Published - 1983 1月 1|
|イベント||Proc of the Int Symp on Electron, Ion, and Photon Beams - Los Angeles, CA, USA|
継続期間: 1983 5月 31 → 1983 6月 3
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